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15N120 1200V Fast IGBT Power Transistor

SKU: BEC0251

Product Details

  • Product: IGBT
  • IC: 15N120
  • Number of pins: 3
  • Mounting type: through hole
  • Package: TO-3PN
  • Package contains: 1 x 15N120 Fast IGBT

89.00

Specification

  • Collector-emitter voltage: 1200V
  • Gate-emitter voltage: ±20V
  • Minimum gate-emitter threshold voltage: 4.5V
  • Maximum gate-emitter threshold voltage: 8.5V
  • Typical gate-emitter threshold voltage: 6.5V
  • Collector to emitter saturation voltage: 1.9V to 2.3V (vary with temperature, current, and voltage conditions)
  • Collector current
    • At 25℃: 30V
    • At 50℃: 15V
  • Maximum pulsed collector current: 45A
  • Diode continuous forward current: 15A
  • Diode maximum forward current:  45A
  • Collector cut-off current: 3mA
  • Gate-emitter leakage current: ±250nA
  • Rise time: 20ns
  • Fall time: 100ns
  • Storage and operating temperature: -55℃ to 150V
SKU: BEC0251 Categories: , ,

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