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2N3055 NPN Switching and High Power Amplifier Transistor

SKU: BEC0058

Product Details

  • Product: 2N3055 Transistor
  • Polarity: NPN
  • Mounting type: through hole
  • Package type: TO-204AA (TO-3)
  • Case: 1-07 (Style1)
  • Package contains: 1 x 2N3055 NPN Switching and High Power Amplifier Transistor


Additional Info
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  • 2N3055 is a silicon NPN transistor, designed for general purpose switching and amplification applications. It is manufactured with the epitaxial base process, mounted in a hermetically sealed metal case. This is a current control device, in which a small current at the base controls a large amount of current at emitter and collector side. It also can be used in audio power amplifiers as it has a good amplifying factor and gain is almost linear. 


    • Current controlled device
    • Medium power transistor
    • Linear gain
    • The excellent safe operating area
    • Complementary NPN-NPN transistor
    • The low collector-emitter saturation voltage


    • Collector-emitter voltage: 60V DC
    • Collector-base voltage: 100V Dc
    • Emitter-base voltage: 7V DC
    • Maximum continuous collector current: 15A DC
    • Maximum base current: 7A DC
    • Collector cutoff current: 0.7mA to 5mA
    • Emitter cutoff current: 5mA
    • DC current gain (hFE): 20 to 70
    • Total power dissipation: 115W
    • Operating temperature: -65℃ to +200℃


    • Power switching and amplifier circuit
    • PWM or motor control applications
    • Regulator circuits
    • Signal amplifiers

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