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2N3055 NPN Switching and High Power Amplifier Transistor

SKU: BEC0058
(2 customer reviews)

Product Details

  • Product: 2N3055 Transistor
  • Polarity: NPN
  • Mounting type: through hole
  • Package type: TO-204AA (TO-3)
  • Case: 1-07 (Style1)
  • Package contains: 1 x 2N3055 NPN Switching and High Power Amplifier Transistor

59.00

** Product image is for reference purpose only.
Pls. refer to Description for more Info.

2N3055 is a silicon NPN transistor, designed for general purpose switching and amplification applications. It is manufactured with the epitaxial base process, mounted in a hermetically sealed metal case. This is a current control device, in which a small current at the base controls a large amount of current at emitter and collector side. It also can be used in audio power amplifiers as it has a good amplifying factor and gain is almost linear. 

Features
  • Current controlled device
  • Medium power transistor
  • Linear gain
  • The excellent safe operating area
  • Complementary NPN-NPN transistor
  • The low collector-emitter saturation voltage
Specification
  • Collector-emitter voltage: 60V DC
  • Collector-base voltage: 100V Dc
  • Emitter-base voltage: 7V DC
  • Maximum continuous collector current: 15A DC
  • Maximum base current: 7A DC
  • Collector cutoff current: 0.7mA to 5mA
  • Emitter cutoff current: 5mA
  • DC current gain (hFE): 20 to 70
  • Total power dissipation: 115W
  • Operating temperature: -65℃ to +200℃
Application
  • Power switching and amplifier circuit
  • PWM or motor control applications
  • Regulator circuits
  • Signal amplifiers