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2N60 2A 600V N Channel Power IGBT MOSFET

SKU: BEC0265

Product Details

  • Product: 2N60 IGBT
  • Polarity: N-channel
  • Package: TO-220F
  • Number of pins: 3
  • Mourning type: through hole
  • Package contains: 1 x 2N60 2A 600V N Channel Power IGBT MOSFET


** Product image is for reference purpose only.
Pls. refer to Description for more Info.

2N60 is an enhancement mode power field effect transistor. This advanced technology has been specially designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. 


  • High switching performance
  • Low on-state resistance
  • Low gate charge
  • 100% avalanche tested


  • Drain-source voltage: 600V
  • Gate-source voltage: ±30V
  • Gate threshold voltage: 3V to5V
  • Drain current (continuous)
    • @25℃: 5.8A
    • @10025℃: 3.7A
  • Drain current (pulsed): 23A
  • Drain-source Diode forward voltage: 1.4V
  • Rise time: 115ns to 240ns
  • Fall time: 85ns to 180ns
  • Turn-on delay time: 30ns to 70ns
  • Turn-off delay time: 95ns to 200ns
  • Diode reverse recovery time: 380ns
  • Diode reverse recovery charge: 3.5µC
  • Gate-source charge: 8.6nC
  • Gate-drain charge: 21nC
  • Total gate charge: 42nC to 54nC
  • Maximum power dissipation: 55W
  • Operating temperature: -55℃ to +150℃
SKU: BEC0265 Categories: , ,

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