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2N60 2A 600V N Channel Power IGBT MOSFET

SKU: BEC0265

Product Details

  • Product: 2N60 IGBT
  • Polarity: N-channel
  • Package: TO-220F
  • Number of pins: 3
  • Mourning type: through hole
  • Package contains: 1 x 2N60 2A 600V N Channel Power IGBT MOSFET

25.00

2N60 is an enhancement mode power field effect transistor. This advanced technology has been specially designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. 

Features

  • High switching performance
  • Low on-state resistance
  • Low gate charge
  • 100% avalanche tested

Specification

  • Drain-source voltage: 600V
  • Gate-source voltage: ±30V
  • Gate threshold voltage: 3V to5V
  • Drain current (continuous)
    • @25℃: 5.8A
    • @10025℃: 3.7A
  • Drain current (pulsed): 23A
  • Drain-source Diode forward voltage: 1.4V
  • Rise time: 115ns to 240ns
  • Fall time: 85ns to 180ns
  • Turn-on delay time: 30ns to 70ns
  • Turn-off delay time: 95ns to 200ns
  • Diode reverse recovery time: 380ns
  • Diode reverse recovery charge: 3.5µC
  • Gate-source charge: 8.6nC
  • Gate-drain charge: 21nC
  • Total gate charge: 42nC to 54nC
  • Maximum power dissipation: 55W
  • Operating temperature: -55℃ to +150℃
SKU: BEC0265 Categories: , ,

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