40N60 N-Channel Power IGBT MOSFET

SKU: BEC0268

Product Details

  • Product: 40N60 IGBT
  • Polarity: N-channel
  • Package: TO-3P
  • Number of pins: 3
  • Mourning type: through hole
  • Package contains: 1 x 40N60 N-Channel Power IGBT MOSFET

229.00

** Product image is for reference purpose only.
Pls. refer to Description for more Info.

Features

  • Low conduction loss
  • Fast switching 
  • High input impedance

Specification

  • Collector-emitter voltage: 600V
  • Gate-emitter voltage: ±20V
  • Gate-emitter threshold voltage: 4V to 6.5V
  • Collector-emitter saturation voltage: 1.8V to 2.7V
  • Collector current (continuous)
    • @25℃: 80A
    • @10025℃: 40A
  • Collector current (pulsed): 120A
  • Diode forward voltage: 1.9V to 2.6V
  • Rise time: 80ns
  • Fall time: 105ns
  • Turn-on delay time: 18ns
  • Turn-off delay time: 110ns
  • Diode reverse recovery time: 32ns
  • Diode reverse recovery charge: 74nC
  • Gate-emitter charge: nC
  • Gate-collector charge: 52nC
  • Maximum power dissipation: 290W
  • Operating temperature: -55℃ to +175℃
SKU: BEC0268 Category:

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