Boards and Programmer
40N60 N-Channel Power IGBT MOSFET
SKU: BEC0268Product Details
- Product: 40N60 IGBT
- Polarity: N-channel
- Package: TO-3P
- Number of pins: 3
- Mourning type: through hole
- Package contains: 1 x 40N60 N-Channel Power IGBT MOSFET
₹269.00
Features
- Low conduction loss
- Fast switching
- High input impedance
Specification
- Collector-emitter voltage: 600V
- Gate-emitter voltage: ±20V
- Gate-emitter threshold voltage: 4V to 6.5V
- Collector-emitter saturation voltage: 1.8V to 2.7V
- Collector current (continuous)
- @25℃: 80A
- @10025℃: 40A
- Collector current (pulsed): 120A
- Diode forward voltage: 1.9V to 2.6V
- Rise time: 80ns
- Fall time: 105ns
- Turn-on delay time: 18ns
- Turn-off delay time: 110ns
- Diode reverse recovery time: 32ns
- Diode reverse recovery charge: 74nC
- Gate-emitter charge: nC
- Gate-collector charge: 52nC
- Maximum power dissipation: 290W
- Operating temperature: -55℃ to +175℃
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