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IRF3205 N-Channel HexFET Power MOSFET Original IC

SKU: BEC0182
Infineon Technologies

Product Details:

IC numberIRF3205
Transistor typeMOSFET
Number of pins3
Pin typeThrough holes
Package contains1 x IRF3205 MOSFET IC

**Product image is for reference purpose only. Actual product may differ from image shown.


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1-9 10-24 25-99 100+
52.00 49.92 48.36 47.32
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IRF3205 is a advanced HexFET power MOSFET from international rectifier (infineon). It uses the advance processing technique to get extremely low on-resistance per silicon area, fast switching and ruggedized device design. The MOSFET has TO-220 package which is most commonly preferred commercially.


Infineon Technologies

  • Drain-to-source voltage: 55V
  • gate -to-source voltage: ±20V
  • Continuous drain current: 80A
  • Pulsed drain current: 390A
  • Avalanche current: 62A
  • Static drain to source on-resistance: 8mΩ
  • Gate threshold voltage: 2V to 4V
  • Rise time: 101ns
  • Fall time: 65ns

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