IRF3205 N-Channel HexFET Power MOSFET Original ICSKU: BEC0182
|Number of pins||3|
|Pin type||Through holes|
|Package contains||1 x IRF3205 MOSFET IC|
**Product image is for reference purpose only. Actual product may differ from image shown.
IRF3205 is a advanced HexFET power MOSFET from international rectifier (infineon). It uses the advance processing technique to get extremely low on-resistance per silicon area, fast switching and ruggedized device design. The MOSFET has TO-220 package which is most commonly preferred commercially.
- Drain-to-source voltage: 55V
- gate -to-source voltage: ±20V
- Continuous drain current: 80A
- Pulsed drain current: 390A
- Avalanche current: 62A
- Static drain to source on-resistance: 8mΩ
- Gate threshold voltage: 2V to 4V
- Rise time: 101ns
- Fall time: 65ns
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