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IRF510 100V 5.6A N-Channel Power MOSFET

SKU: BEC0308

Product Details

  • Product: IRF510
  • Transistor type: MOSFET
  • Control channel: N-Channel
  • No of pins: 3
  • Package: TO-220AB
  • Mounting type: through hole
  • Package contains: 1 x IRF510 100V 5.6A N-Channel Power MOSFET

49.00

Additional Info
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  • Features

    • Dynamic dv/dt capability
    • Fully avalanche rated
    • Ultra low on-resistance
    • Ease of paralleling
    • Simple drive requirement 
    • 175℃ operating temperature

    Specification

    • Drain-source voltage: -55V
    • Drain-gate voltage: -55V
    • Gate-source voltage: ±20V
    • Continuous drain current:
      • At 25℃: 5.6A
      • At 100℃: 4A
    • Pulsed drain current: 20A
    • Maximum avalanche current: 5.6A
    • Gate threshold voltage: 2V to 4V
    • Drain-to-source leakage current: 25µA
    • Gate-to-source forward leakage: 100nA
    • Gate-to-source reverse leakage: -100nA
    • Rise time: 16nS
    • Fall time: 9.4nS
    • Turn-on delay time: 6.9nS
    • Turn-off delay time: 15nS
    • Diode forward voltage: 2.5V
    • Reverse recovery time: 100ns to 200ns
    • Reverse recovery charge: 0.44µC to 0.88µC
    • Maximum power dissipation: 43W
    • Operating temperature: -55℃ to 175℃
    SKU: BEC0308 Categories: , ,

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