IRF630 200V 9A N-Channel Power MOSFET

SKU: BEC0314

Product Details

  • Product: IRF630
  • Transistor type: MOSFET
  • Control channel: N-Channel
  • No of pins: 3
  • Package: TO-220AB
  • Mounting type: through hole
  • Package contains: 1 x IRF630 200V 9A N-Channel Power MOSFET

29.00

Features

  • Dynamic dv/dt capability
  • Fully avalanche rated
  • Advanced process technology
  • Fast switching 
  • Ease of paralleling
  • Simple drive requirement 
  • 175℃ operating temperature

Specification

  • Drain-source voltage: 200V
  • Drain-gate voltage: 200V
  • Gate-source voltage: ±20V
  • Continuous drain current:
    • At 25℃: 9.3A
    • At 100℃: 6.5A
  • Pulsed drain current: 37A
  • Maximum avalanche current: 9.3A
  • Gate threshold voltage: 2V to 4V
  • Drain-to-source leakage current: 25µA
  • Gate-to-source forward leakage: 100nA
  • Gate-to-source reverse leakage: -100nA
  • Rise time: 14nS
  • Fall time: 15nS
  • Turn-on delay time: 7.9nS
  • Turn-off delay time: 27nS
  • Diode forward voltage: 1.3V
  • Reverse recovery time: 117ns to 176ns
  • Reverse recovery charge: 542nC to 813nC
  • Maximum power dissipation: 82W
  • Operating temperature: -55℃ to 175℃
SKU: BEC0314 Category:

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