IRF820 500V 2.5A N-Channel Power MOSFET

SKU: BEC0319

Product Details

  • Product: IRF820
  • Transistor type: MOSFET
  • Control channel: N-Channel
  • No of pins: 3
  • Package: TO-220AB
  • Mounting type: through hole
  • Package contains: 1 x IRF820 500V 2.5A N-Channel Power MOSFET

29.00

Features

  • Dynamic dv/dt capability
  • Fully avalanche rated
  • Very low intrinsic capacitances
  • Gate charge minimize

Specification

  • Drain-source voltage: 500V
  • Drain-gate voltage: 500V
  • Gate-source voltage: ±20V
  • Continuous drain current:
    • At 25℃: 2.5A
    • At 100℃: 1.6A
  • Pulsed drain current: 10A
  • Maximum avalanche current: 2.5A
  • Gate threshold voltage: 2.0V to 4.5V
  • Drain-to-source leakage current: 25µA to 250µA
  • Gate-to-source forward leakage: -100nA
  • Gate-to-source reverse leakage: 100nA
  • Rise time: 12nS
  • Fall time: 13nS
  • Turn-on delay time: 8.1nS
  • Turn-off delay time: 16nS
  • Diode forward voltage: 1.6V
  • Reverse recovery time: 330ns to 500ns
  • Reverse recovery charge: 760nC to 1140nC
  • Maximum power dissipation: 43W
  • Operating temperature: -55℃ to 150℃
SKU: BEC0319 Category:

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