IRF820 500V 2.5A N-Channel Power MOSFET

SKU: BEC0319

Product Details

  • Product: IRF820
  • Transistor type: MOSFET
  • Control channel: N-Channel
  • No of pins: 3
  • Package: TO-220AB
  • Mounting type: through hole
  • Package contains: 1 x IRF820 500V 2.5A N-Channel Power MOSFET

29.00

Additional Info
  • Product image is for reference purpose only.
  • Prices shown are inclusive of GST.
  • Now pay the Lowest shipping of Rs.49 Only
  • Free shipping on value > Rs.999.
  • COD Now Available at extra charge of Rs.50
  • Upto 70% Off on Bulk Orders. Whatsapp Us now.
  • Features

    • Dynamic dv/dt capability
    • Fully avalanche rated
    • Very low intrinsic capacitances
    • Gate charge minimize

    Specification

    • Drain-source voltage: 500V
    • Drain-gate voltage: 500V
    • Gate-source voltage: ±20V
    • Continuous drain current:
      • At 25℃: 2.5A
      • At 100℃: 1.6A
    • Pulsed drain current: 10A
    • Maximum avalanche current: 2.5A
    • Gate threshold voltage: 2.0V to 4.5V
    • Drain-to-source leakage current: 25µA to 250µA
    • Gate-to-source forward leakage: -100nA
    • Gate-to-source reverse leakage: 100nA
    • Rise time: 12nS
    • Fall time: 13nS
    • Turn-on delay time: 8.1nS
    • Turn-off delay time: 16nS
    • Diode forward voltage: 1.6V
    • Reverse recovery time: 330ns to 500ns
    • Reverse recovery charge: 760nC to 1140nC
    • Maximum power dissipation: 43W
    • Operating temperature: -55℃ to 150℃
    SKU: BEC0319 Category:

    Based on 0 reviews

    0.0 overall
    0
    0
    0
    0
    0

    Be the first to review “IRF820 500V 2.5A N-Channel Power MOSFET”

    There are no reviews yet.