IRF9Z24 60V 11A P-Channel Power MOSFET

SKU: BEC0327
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Product Details

  • Product: IRF9Z24
  • Transistor type: MOSFET
  • Control channel: P-Channel
  • No of pins: 3
  • Package: TO-220
  • Mounting type: through hole
  • Package contains: 1 x IRF9Z24 60V 11A P-Channel Power MOSFET

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Features

  • Dynamic dv/dt capability
  • Advanced process technology
  • Fully avalanche rated
  • Fast switching

Specification

  • Drain-source voltage: 55V
  • Drain-gate voltage: 55V
  • Gate-source voltage: ±20V
  • Continuous drain current:
    • At 25℃: 17A
    • At 100℃: 12A
  • Pulsed drain current: 68A
  • Maximum avalanche current: 10A
  • Gate threshold voltage: 2V to 4V
  • Drain-to-source leakage current: 25µA
  • Gate-to-source forward leakage: 100nA
  • Gate-to-source reverse leakage: -100nA
  • Rise time: 34nS
  • Fall time: 27nS
  • Turn-on delay time: 4.9nS
  • Turn-off delay time: 19nS
  • Maximum power dissipation: 45W
  • Operating temperature: -55℃ to 175℃
SKU: BEC0327 Category:

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