IRF9Z24 60V 11A P-Channel Power MOSFET

SKU: BEC0327

Product Details

  • Product: IRF9Z24
  • Transistor type: MOSFET
  • Control channel: P-Channel
  • No of pins: 3
  • Package: TO-220
  • Mounting type: through hole
  • Package contains: 1 x IRF9Z24 60V 11A P-Channel Power MOSFET


** Product image is for reference purpose only.
Pls. refer to Description for more Info.

  • Dynamic dv/dt capability
  • Advanced process technology
  • Fully avalanche rated
  • Fast switching
  • Drain-source voltage: 55V
  • Drain-gate voltage: 55V
  • Gate-source voltage: ±20V
  • Continuous drain current:
    • At 25℃: 17A
    • At 100℃: 12A
  • Pulsed drain current: 68A
  • Maximum avalanche current: 10A
  • Gate threshold voltage: 2V to 4V
  • Drain-to-source leakage current: 25µA
  • Gate-to-source forward leakage: 100nA
  • Gate-to-source reverse leakage: -100nA
  • Rise time: 34nS
  • Fall time: 27nS
  • Turn-on delay time: 4.9nS
  • Turn-off delay time: 19nS
  • Maximum power dissipation: 45W
  • Operating temperature: -55℃ to 175℃
SKU: BEC0327 Category:

Based on 0 reviews

0.0 overall

Be the first to review “IRF9Z24 60V 11A P-Channel Power MOSFET”

There are no reviews yet.

All the products carry a Standard Warranty of 7 days to protect customers from manufacturing defects Only.

Warranty Voids If:

  • a product is found to be misused, modified, static discharge, soldered, or altered in any way or non-insulated contacts.
  • the customer is unable to produce proper information like product working video demonstration or images showing the clear defects.

Note: The reimbursement/refund/exchange will be done according to Return Policy.