IRFB4110 100V 180A N-Channel Power MOSFET

SKU: BEC0329

Product Details

  • Product: IRFB4110
  • Transistor type: MOSFET
  • Control channel: N-Channel
  • No of pins: 3
  • Package: TO-220AB
  • Mounting type: through hole
  • Package contains: 1 x IRFB4110 100V 180A N-Channel Power MOSFET

99.00

Features

  • Dynamic dv/dt capability
  • Advanced process technology
  • Fully avalanche rated
  • Fast switching

Specification

  • Drain-source voltage: 100V
  • Drain-gate voltage: 100V
  • Gate-source voltage: ±20V
  • Continuous drain current:
    • At 25℃: 180A
    • At 100℃: 130A
  • Pulsed drain current: 670A
  • Gate threshold voltage: 2V to 4V
  • Drain-to-source leakage current: 20µA
  • Gate-to-source forward leakage: 100nA
  • Gate-to-source reverse leakage: -100nA
  • Rise time: 67nS
  • Fall time: 88nS
  • Turn-on delay time: 25ns
  • Turn-off delay time: 78ns
  • Diode forward voltage: 1.3V
  • Reverse recovery time: 50ns to 90ns
  • Reverse recovery charge: 94nC to 140nC
  • Reverse recovery current: 3.5A
  • Maximum power dissipation: 370W
  • Operating temperature: -55℃ to 175℃

Application

  • Motion control application
  • High efficiency synchronous rectification in SMPS
  • Uninterrupted power supply
  • Hard switched and high frequency circuits
SKU: BEC0329 Category:

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