IRFBE30 800V 4.1A N-Channel Power MOSFET

SKU: BEC0333

Product Details

  • Product: IRFBE30
  • Transistor type: MOSFET
  • Control channel: N-channel
  • No of pins: 3
  • Package: TO-220
  • Mounting type: through hole
  • Package contains: 1 x IRFBE30 800V 4.1A N-Channel Power MOSFET

79.00

** Product image is for reference purpose only.
Pls. refer to Description for more Info.

Features

  • High dv/dt capability
  • Repetitive avalanche rated
  • Very low intrinsic capacitance
  • Gate charge minimized
  • Fast switching
  • Ease of paralleling
  • Simple drive requirement

Specification

  • Drain-source voltage: 800V
  • Drain-gate voltage: 800V
  • Gate-source voltage: ±20V
  • Continuous drain current:
    • At 25℃: 4.1A
    • At 100℃: 2.6A
  • Pulsed drain current: 16A
  • Repetitive avalanche current: 4.1A
  • Maximum power dissipation: 125W
  • Operating temperature: -55℃ to 150℃

Application

  • High current, high-speed switching
  • Switch mode power supply (SMPS)
  • DC-AC converters for power supply and motor driver
SKU: BEC0333 Category:

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