IRFBG30 1000V 3.1A N-Channel Power MOSFET

SKU: BEC0334

Product Details

  • Product: IRFBG30
  • Transistor type: MOSFET
  • Control channel: N-channel
  • No of pins: 3
  • Package: TO-220
  • Mounting type: through hole
  • Package contains: 1 x IRFBG30 1000V 3.1A N-Channel Power MOSFET


** Product image is for reference purpose only.
Pls. refer to Description for more Info.

  • Dynamic dv/dt capability
  • Repetitive avalanche rated
  • Fast switching
  • Ease of paralleling
  • Simple drive requirement
  • Drain-source voltage: 1000V
  • Drain-gate voltage: 1000V
  • Gate-source voltage: ±20V
  • Continuous drain current:
    • At 25℃: 3.1A
    • At 100℃: 2A
  • Pulsed drain current: 12A
  • Avalanche current: 3.1A
  • Maximum power dissipation: 125W
  • Operating temperature: -55℃ to 175℃
SKU: BEC0334 Category:

Based on 0 reviews

0.0 overall

Be the first to review “IRFBG30 1000V 3.1A N-Channel Power MOSFET”

There are no reviews yet.

All the products carry a Standard Warranty of 7 days to protect customers from manufacturing defects Only.

Warranty Voids If:

  • a product is found to be misused, modified, static discharge, soldered, or altered in any way or non-insulated contacts.
  • the customer is unable to produce proper information like product working video demonstration or images showing the clear defects.

Note: The reimbursement/refund/exchange will be done according to Return Policy.