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K50T60 High Power MOSFET IGBT

SKU: BEC0266

Product Details

  • Product Type: IGBT
  • Polarity: N-channel
  • Package: TO-247
  • No of pins: 3
  • Mounting type: through hole
  • Package contains: 1 x K50T60 High Power MOSFET IGBT

335.00

** Product image is for reference purpose only.
Pls. refer to Description for more Info.

Features

  • Very low Vce (typ. 1.5V)
  • Short circuit withstand time 5µs
  • Very tight parameter distribution
  • High ruggedness, temperature stable behavior
  • Very high switching speed
  • Positive temperature coefficient in Vce
  • Low EMI
  • Low gate charge
  • Very soft, fast recovery antiparallel Emitter Collectrolled HE diode

Specification

  • Collector-emitter breakdown voltage: 600V
  • Collector-emitter saturation voltage: 1.5V to 2V
  • Gate-emitter voltage: ±20V
  • Gate-emitter threshold voltage: 4.1V to 5.7V
  • Diode forward voltage: 1.65V to 2.05V
  • DC collector current:
    • @25℃: 80A
    • @100℃: 50A
  • Pulsed collector current: 150A
  • Diode forward current:
    • 25℃: 100A
    • 100℃: 50A
  • Diode pulsed current: 150A
  • Short circuit withstand time: 5µs
  • Total power dissipation: 333W
  • Operating temperature: -40℃ to +175℃

Application

  • Frequency converters
  • Uninterrupted power supply
SKU: BEC0266 Categories: , , ,

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